Single-mode operation over a wide temperature range in 1.3 μm InGaAsP/InP distributed feedback lasers
Identifieur interne : 01A465 ( Main/Repository ); précédent : 01A464; suivant : 01A466Single-mode operation over a wide temperature range in 1.3 μm InGaAsP/InP distributed feedback lasers
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Abstract
An approach for single mode operation of 1.3 μm distributed feedback (DFB) lasers with a large side mode suppression ratio over a wide temperature range of -40°C to 100 °C is reported. The lasers utilize an optimized strained-layer multiquantum well (MQW) active region in combination with index/gain-coupling and detuning effect. A high characteristic temperature To (90-100 K) was obtained in 1.3 μm InGaAsP/InP strained-layer MQW Fabry-Perot lasers when the number of QW's exceeded 10. In gain-coupled DFB lasers, a very low temperature dependence of the threshold current has been obtained when there is no detuning or positive detuning of the lasing wavelength at room temperature with respect to the material gain peak. An infinite To can be realized over certain temperature ranges, in which the threshold current exhibits a minimum, depending on the amount of detuning. The physical mechanism responsible for the appearance of this minimum, as well as the high side mode suppression ratio, are explained theoretically.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Single-mode operation over a wide temperature range in 1.3 μm InGaAsP/InP distributed feedback lasers</title><author><name sortKey="Lu, H" uniqKey="Lu H">H. Lu</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>LASERTRON</s1><s2>Burlington, MA 01803</s2><s3>USA</s3><sZ>1 aut.</sZ></inist:fA14><country>États-Unis</country><placeName><region type="state">Louisiane</region></placeName></affiliation></author><author><name sortKey="Blaauw, C" uniqKey="Blaauw C">C. Blaauw</name></author><author><name sortKey="Makino, T" uniqKey="Makino T">T. Makino</name></author></titleStmt><publicationStmt><idno type="inist">96-0320820</idno><date when="1996">1996</date><idno type="stanalyst">PASCAL 96-0320820 INIST</idno><idno type="RBID">Pascal:96-0320820</idno><idno type="wicri:Area/Main/Corpus">01AC28</idno><idno type="wicri:Area/Main/Repository">01A465</idno></publicationStmt><seriesStmt><idno type="ISSN">0733-8724</idno><title level="j" type="abbreviated">J. lightwave technol.</title><title level="j" type="main">Journal of lightwave technology</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Binary compound</term><term>Distributed feedback laser</term><term>Experimental study</term><term>Gallium Arsenides</term><term>III-V compound</term><term>Indium Phosphides</term><term>Multiple quantum well</term><term>Quaternary compound</term><term>Semiconductor laser</term><term>Single mode laser</term><term>Strained quantum well</term><term>Temperature effect</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Etude expérimentale</term><term>Laser monomode</term><term>Laser semiconducteur</term><term>Laser réaction répartie</term><term>Composé III-V</term><term>Indium Phosphure</term><term>Composé binaire</term><term>Gallium Arséniure</term><term>Composé quaternaire</term><term>Effet température</term><term>Puits quantique multiple</term><term>Puits quantique contraint</term><term>InP</term><term>In P</term><term>InGaAsP</term><term>As Ga In P</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">An approach for single mode operation of 1.3 μm distributed feedback (DFB) lasers with a large side mode suppression ratio over a wide temperature range of -40°C to 100 °C is reported. The lasers utilize an optimized strained-layer multiquantum well (MQW) active region in combination with index/gain-coupling and detuning effect. A high characteristic temperature T<sub>o</sub> (90-100 K) was obtained in 1.3 μm InGaAsP/InP strained-layer MQW Fabry-Perot lasers when the number of QW's exceeded 10. In gain-coupled DFB lasers, a very low temperature dependence of the threshold current has been obtained when there is no detuning or positive detuning of the lasing wavelength at room temperature with respect to the material gain peak. An infinite T<sub>o</sub> can be realized over certain temperature ranges, in which the threshold current exhibits a minimum, depending on the amount of detuning. The physical mechanism responsible for the appearance of this minimum, as well as the high side mode suppression ratio, are explained theoretically.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0733-8724</s0></fA01><fA02 i1="01"><s0>JLTEDG</s0></fA02><fA03 i2="1"><s0>J. lightwave technol.</s0></fA03><fA05><s2>14</s2></fA05><fA06><s2>5</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Single-mode operation over a wide temperature range in 1.3 μm InGaAsP/InP distributed feedback lasers</s1></fA08><fA11 i1="01" i2="1"><s1>LU (H.)</s1></fA11><fA11 i1="02" i2="1"><s1>BLAAUW (C.)</s1></fA11><fA11 i1="03" i2="1"><s1>MAKINO (T.)</s1></fA11><fA14 i1="01"><s1>LASERTRON</s1><s2>Burlington, MA 01803</s2><s3>USA</s3><sZ>1 aut.</sZ></fA14><fA20><s1>851-859</s1></fA20><fA21><s1>1996</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>20142</s2><s5>354000043584620270</s5></fA43><fA44><s0>0000</s0><s1>© 1996 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>45 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>96-0320820</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Journal of lightwave technology</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>An approach for single mode operation of 1.3 μm distributed feedback (DFB) lasers with a large side mode suppression ratio over a wide temperature range of -40°C to 100 °C is reported. The lasers utilize an optimized strained-layer multiquantum well (MQW) active region in combination with index/gain-coupling and detuning effect. A high characteristic temperature T<sub>o</sub> (90-100 K) was obtained in 1.3 μm InGaAsP/InP strained-layer MQW Fabry-Perot lasers when the number of QW's exceeded 10. In gain-coupled DFB lasers, a very low temperature dependence of the threshold current has been obtained when there is no detuning or positive detuning of the lasing wavelength at room temperature with respect to the material gain peak. An infinite T<sub>o</sub> can be realized over certain temperature ranges, in which the threshold current exhibits a minimum, depending on the amount of detuning. 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